- Part Number
- IKA08N65ET6XKSA1
- Categories
- IGBT Transistors
- RoHS
- Datasheet
- Description
- IGBT Transistors Discrete 650 V TRENCHSTOP IGBT6 with soft, fast recovery anti-parallel Rapid diode
IKA08N65ET6XKSA1
Images are for reference only
Specifications
- Categories
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 650 V
- Collector-Emitter Saturation Voltage
- 1.5 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 11 A
- Continuous Collector Current Ic Max
- 11 A
- Gate-Emitter Leakage Current
- 100 nA
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- Through Hole
- Package / Case
- TO-220FP-3
- Packaging
- Tube
- Part # Aliases
- Pd - Power Dissipation
- 33 W
- Product Type
- IGBT Transistors
- Series
- IGBT6
- Technology
- SI
- Tradename
- TRENCHSTOP
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Latest Reviews
it is safe and sound all, thank you seller!
Arturo Madril
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Dane Gogic
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Sergio Garcia Carreon
Fast shippng. Good quality. I recomend this seller.
Raymond de Vries
The goods are OK, thank you dealers.
CHARLES SANTOS
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