RQ3C150BCTB

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Part Number
RQ3C150BCTB
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET Pch -20V -30A Si MOSFET

Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
280 ns
Forward Transconductance - Min
25 s
Id - Continuous Drain Current
30 A
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
HSMT-8
Packaging
MouseReel
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
20 W
Product Type
MOSFET
Qg - Gate Charge
60 nC
Rds On - Drain-Source Resistance
4.8 mOhms
Rise Time
80 ns
Technology
SI
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
300 ns
Typical Turn-On Delay Time
26 ns
Vds - Drain-Source Breakdown Voltage
20 V
Vgs - Gate-Source Voltage
8 V
Vgs th - Gate-Source Threshold Voltage
1.2 V

Latest Reviews

fast delivery, item as described, thanks!!

Quickly came to CET, all in one package. Look at the rules

it is safe and sound all, thank you seller!

Decent quality, not минвелл certainly, but enough decent

The goods are OK, thank you dealers.

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