- Part Number
- IKA10N65ET6XKSA2
- Categories
- IGBT Transistors
- RoHS
- Datasheet
- Description
- IGBT Transistors Discrete 650 V TRENCHSTOP IGBT6 with soft, fast recovery anti-parallel Rapid diode
IKA10N65ET6XKSA2
Images are for reference only
Specifications
- Categories
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 650 V
- Collector-Emitter Saturation Voltage
- 1.5 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 15 A
- Continuous Collector Current Ic Max
- 15 A
- Gate-Emitter Leakage Current
- 100 nA
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- Through Hole
- Package / Case
- TO-220FP-3
- Packaging
- Tube
- Part # Aliases
- Pd - Power Dissipation
- 40 W
- Product Type
- IGBT Transistors
- Series
- IGBT6
- Technology
- SI
- Tradename
- TRENCHSTOP
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Latest Reviews
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Eitan Hammami
Perfectly.
Sensofar Tech, SL
Everything is excellent! recommend this seller!
Stoyan Chaykov
Works. Recommend
Rajiv
Packed medium, in transit could поврелиться. But since it's safe, work perfectly
Matt Hookway
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