- Part Number
- IGB50N65H5ATMA1
- Categories
- IGBT Transistors
- RoHS
- Datasheet
- Description
- IGBT Transistors IGBT PRODUCTS
IGB50N65H5ATMA1
Images are for reference only
Specifications
- Categories
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 650 V
- Collector-Emitter Saturation Voltage
- 1.65 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 80 A
- Continuous Collector Current Ic Max
- 80 A
- Gate-Emitter Leakage Current
- 100 nA
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- SMD/SMT
- Package / Case
- TO-263-3
- Packaging
- Reel
- Packaging
- Cut Tape
- Part # Aliases
- Pd - Power Dissipation
- 270 W
- Product Type
- IGBT Transistors
- Series
- TRENCHSTOPâ?¢5
- Technology
- SI
- Tradename
- TRENCHSTOP
Porduct Category
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Latest Reviews
Very good!
Manuel MAde
fast delivery, item as described, thanks!!
Sandra Scheck
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Boris Arshinov
Thank You all fine, packed very well
Ulrich Bundke
Works. Find the price of this product is very good
Maxim Krasnov
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