IKB20N60H3

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Specifications

Categories
IGBT Transistors
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.95 V
Configuration
Single
Continuous Collector Current at 25 C
40 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
TO-263-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
170 W
Product Type
IGBT Transistors
Series
HighSpeed 3
Technology
SI
Tradename
TRENCHSTOP
Unit Weight

Latest Reviews

Perfectly.

Looks good

Good material. Great seller, efficient and insurance. Ok

Received very good

all is well. checked work. seller recommend.

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