- Part Number
- FZ800R12KS4_B2
- Categories
- IGBT Modules
- RoHS
- Datasheet
- Description
- IGBT Modules N-CH 1.2KV 1.2KA
FZ800R12KS4_B2
Images are for reference only
Specifications
- Categories
- IGBT Modules
- Collector- Emitter Voltage VCEO Max
- 1200 V
- Collector-Emitter Saturation Voltage
- 3.7 V
- Configuration
- Dual
- Continuous Collector Current at 25 C
- 1200 A
- Gate-Emitter Leakage Current
- 400 nA
- Height
- 38 mm
- Length
- 140 mm
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 125 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- SMD/SMT
- Package / Case
- IHM130
- Packaging
- Tray
- Part # Aliases
- Pd - Power Dissipation
- 7.6 kW
- Product
- IGBT Silicon Modules
- Product Type
- IGBT Modules
- Technology
- SI
- Width
- 130 mm
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Latest Reviews
Teşekkürler
Ashir Hussain
Takes 8 days to Japan. Good!
Alex Fragkos
Yes, they are all here. :)
sudheer kumar sirra
Everything is excellent! recommend this seller!
Stoyan Chaykov
Works. Find the price of this product is very good
Maxim Krasnov
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