- Part Number
- IKQ75N120CH3XKSA1
- Categories
- IGBT Transistors
- RoHS
- Datasheet
- Description
- IGBT Transistors IGBT PRODUCTS
IKQ75N120CH3XKSA1
Images are for reference only
Specifications
- Categories
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 1200 V
- Collector-Emitter Saturation Voltage
- 2 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 150 A
- Continuous Collector Current Ic Max
- 150 A
- Gate-Emitter Leakage Current
- 100 nA
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- Through Hole
- Package / Case
- TO247-3-46
- Packaging
- Tube
- Part # Aliases
- Pd - Power Dissipation
- 938 W
- Product Type
- IGBT Transistors
- Technology
- SI
- Unit Weight
Porduct Category
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278,174 Products
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Test & Measurement
20,391 Products
Latest Reviews
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Boris Arshinov
Quickly came to CET, all in one package. Look at the rules
Earl Sault
Perfectly.
Sensofar Tech, SL
Goods came in two weeks. Well packed. Track number tracked
kwon yong sik
Shipping a little 1 weeks, normal packing, the procedure is complete.
dennis kraft
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