FZ900R12KE4

Images are for reference only

Specifications

Categories
IGBT Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
2.1 V
Continuous Collector Current at 25 C
900 A
Gate-Emitter Leakage Current
400 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Mounting Style
Chassis Mount
Packaging
Tray
Part # Aliases
Pd - Power Dissipation
4300 W
Product
IGBT Silicon Modules
Product Type
IGBT Modules
Technology
SI

Latest Reviews

Teşekkürler

Takes 8 days to Japan. Good!

Yes, they are all here. :)

Everything is excellent! recommend this seller!

Works. Find the price of this product is very good

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