MG06100S-BN4MM

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Specifications

Categories
IGBT Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.45 V
Configuration
Dual
Continuous Collector Current at 25 C
125 A
Gate-Emitter Leakage Current
400 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Mounting Style
Chassis Mount
Package / Case
Package S
Packaging
Bulk
Pd - Power Dissipation
330 W
Product
IGBT Silicon Modules
Product Type
IGBT Modules
Series
MG06100S
Technology
SI
Unit Weight

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