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SQ4282EY-T1_GE3

SQ4282EY-T1_GE3
Images are for reference only
Part Number
SQ4282EY-T1_GE3
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET N Ch 30Vds 20Vgs AEC-Q101 Qualified
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Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Dual
Fall Time
8 ns, 8 ns
Forward Transconductance - Min
67 S, 67 S
Id - Continuous Drain Current
8 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
SO-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
3.9 W
Product Type
MOSFET
Qg - Gate Charge
47 nC, 47 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
10 mOhms
Rise Time
11 ns, 11 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel
Transistor Type
2 N-Channel
Typical Turn-Off Delay Time
34 ns, 34 ns
Typical Turn-On Delay Time
10 ns, 10 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1.5 V

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Latest Reviews

Write Your Own Reivew
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Hello! Order received, very happy. Thank you very much!
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
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