ZTX1051A

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Specifications

Categories
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
150 V
Collector- Emitter Voltage VCEO Max
40 V
Configuration
Single
Continuous Collector Current
4 A
DC Collector/Base Gain hfe Min
290 at 10 mA, 2 V, 300 at 1 A, 2 V, 190 at 4 A, 2 V, 45 at 10 A, 2 V
DC Current Gain hFE Max
290 at 10 mA, 2 V
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
155 MHz
Height
4.01 mm
Length
4.77 mm
Maximum DC Collector Current
4 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Package / Case
TO-92-3
Packaging
Bulk
Pd - Power Dissipation
1 W
Product Type
BJTs - Bipolar Transistors
Series
ZTX1051
Technology
SI
Transistor Polarity
NPN
Unit Weight
Width
2.41 mm

Latest Reviews

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all exactly and work. радиолюбителя useful set to, thank you)

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